Before Qimonda’s unfortunate demise last year, they delivered an impressive paper at IEDM  describing a “buried wordline” (BwL). Memory chip supplier Qimonda says it is about to begin commercial production of DRAM chips using its new “Buried Wordline” technology. Provided are a semiconductor device having a buried word line structure in which a gate electrode and a word line may be buried within a substrate to reduce.
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The gate electrode layer may be formed using a chemical vapor deposition CVD or an atomic layer deposition ALD method.
The device may be otherwise oriented rotated 90 degrees or at other orientations and the spatially relative descriptors used herein interpreted accordingly. These terms are only used to distinguish one element, component, woedline, layer or section from another region, layer or section.
Furthermore, because the lower buried word line may be formed of polysilicon, a reduction of the aspect ratio is obtained. Elpida has also licensed the process, so given the cost and performance advantages, we can likely look forward to BwL product from Japan; and who knows what other manufacturers might go that way?
The semiconductor device of claim 1wherein the lower buriev word line includes polysilicon. Semiconductor devices including a field effect transistor and methods of the same. The semiconductor device of claim 1wherein the gate electrode layer has a thickness within a range of about 1 to about 10 nm. Therefore, in order to form the continuous polysilicon layer having a width of about 5 nm, Si 3 H 8 gas may be used. As illustrated, the gate electrode layer may be recessed to the same level as the buried word line Extension Media websites place cookies on your device to give you the best user experience.
‘Buried Wordline’ DRAM becomes reality | Electronics News
Non-volatile semiconductor memory device having vertical transistors with the floating and control gates in a trench and fabrication method therefor. The oxide layer formed on the top surface of the substrate when forming the gate insulating layer may be removed using a conventional method e.
A metal gate electrode 20which fills the trench 14 on the gate insulating layer 16 and protrudes beyond the substrate 10is formed. In example embodiments, forming of the buried word line may include forming a word line layer on the substrate so as to bury the trench, polishing the word line layer using chemical mechanical polishing CMP and an etch-back method which uses a dry etch to expose the surface of the substrate, and recessing the polished word line layer into the substrate.
The buried word line may be formed by recessing the polished word line layer into the substrate using a partial etch process. In example embodiments, the trench may be formed to have a width within a range of about 10 to about nm.
In general, when thinly forming a polysilicon layer using an atomic layer deposition method, SiH 4 gas or Si 2 H 6 gas may be used as the silicon source gas. And they are in volume production, we have also found them in a point and shoot camera.
In example embodiments, a method of fabricating a semiconductor device having a buried word line structure may include forming a device isolation layer defining an active region in a semiconductor substrate, forming a trench for forming one or more recess channels in the active region, forming a gate insulating layer on a surface of the trench, forming a gate electrode layer on a surface of the gate insulating layer, and forming a buried word line burying the trench on a surface of the gate electrode layer.
According to example embodiments, a semiconductor device having a buried word line structure may comprise a semiconductor substrate defined by a device isolation layer and comprising an active region in which a trench for forming one or more recess channels are formed.
6F2 buried wordline DRAM cell for 40nm and beyond – Semantic Scholar
The gate electrode layer may be formed so as to have a thickness within a range of about 1 to about 10 nm, for example, below 5 nm. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
The buried word line qordline be formed by forming a word line layer on the substrate so as to bury the trench The top surface of the capping layer may be formed so as to not protrude beyond the surface of the substrate.
The forming of the buried word line may comprise forming the lower buried word line in the lower region of the gate electrode layer, and forming the upper buried word line in the upper region of the gate electrode layer. Nonvolatile semiconductor wordlne device with tapered sidewall gate and method of manufacturing the same.
6F2 buried wordline DRAM cell for 40nm and beyond
Worrline upper buried word line may be formed by recessing the polished second word line layer into the substrate In example embodiments, the gate insulating layer may be a thermal oxide layer formed by thermal oxidation. The buried word line may comprise any one wordlinw from the group consisting of tungsten Waluminum Alcupper Cuwordlins Motitanium Titantalum Taand ruthenium Ruor a combination thereof. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures.
The semiconductor device of claim 1further comprising: Comments won’t automatically be posted to your social media accounts unless you select to share. Burier trench forming a recess channel within the active region defined by the device isolation layer may be formed. However, example embodiments are not limited to the embodiments illustrated hereinafter, and the embodiments herein are rather introduced to provide easy and complete understanding of the scope and spirit of example embodiments.
A method of fabricating a semiconductor device having a buried word line structure may comprise forming a device buied layer defining an active region in a semiconductor substrate, forming a trench for forming one or more recess channels in the active region, forming a gate insulating layer on the surface of the trench, forming a gate electrode layer on the surface of the gate insulating layer, and forming a buried word line burying the trench on the surface of the gate electrode layer.
Materials used to form the gate electrode layer will be described in detail below. In addition, the diffusion length may be shorter in comparison to the worddline word line being formed only of silicide.